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APT10M19BVR

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单 FET、MOSFET

APT10M19BVR

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs300 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds6120 pF @ 25 V
FET Feature-
Power Dissipation (Max)370W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package/ CaseTO-247-3

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Microchip Technology 单 FET、MOSFET 产品 APT10M19BVR

作为Microchip Technology优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购APT10M19BVR时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买APT10M19BVR绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解APT10M19BVR产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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