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AOD1N60M

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单 FET、MOSFET

MOSFET

参数名称参数值
Product StatusLast Time Buy
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 650mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252 (DPAK)
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Alpha and Omega Semiconductor, Inc. 单 FET、MOSFET 产品 AOD1N60M

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