| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-DSO-20-85 |
| Package/ Case | 20-PowerSOIC (0.433", 11.00mm Width) |
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Infineon Technologies 单 FET、MOSFET 产品 IGO60R070D1E8220AUMA1
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