参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 74mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK-3 |
Package/ Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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onsemi 单 FET、MOSFET 产品 NVD6416ANLT4G-001-VF01
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