| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 750mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±5V |
| Input Capacitance (Ciss) (Max) @ Vds | 102 pF @ 0 V |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 2-HWSON (5x4) |
| Package/ Case | 2-DFN Exposed Pad |
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Renesas Electronics Corporation 单 FET、MOSFET 产品 RQA0002DNSTB-E
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