参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
Vgs (Max) | +8V, -12V |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Supplier Device Package | UPAK |
Package/ Case | TO-243AA |
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Renesas Electronics Corporation 单 FET、MOSFET 产品 RQJ0305EQDQS#H1
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