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RJK6013DPE-WS#J3

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单 FET、MOSFET

MOSFET N-CH 600V 11A 4LDPAK

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs700mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs37.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 25 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageLDPAK
Package/ CaseSC-83

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