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FDMC010N08LC

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单 FET、MOSFET
onsemi

MOSFET N-CH 80V 11A/50A 8PQFN

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id3V @ 90µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2135 pF @ 40 V
FET Feature-
Power Dissipation (Max)2.3W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (3.3x3.3)
Package/ Case8-PowerWDFN

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