参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250A |
Gate Charge (Qg) (Max) @ Vgs | 0.51 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 1.06W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Package/ Case | TO-236-3, SC-59, SOT-23-3 |
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