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TSM052N06PQ56 RLG

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单 FET、MOSFET

MOSFET N-CH 60V 100A 8PDFN

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3686 pF @ 30 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (5x6)
Package/ Case8-PowerTDFN

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM052N06PQ56 RLG

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