| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V |
| Vgs (Max) | ±18V |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package/ Case | TO-220-3 |
新闻资讯
Transphorm 单 FET、MOSFET 产品 TPH3208PD
作为Transphorm优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购TPH3208PD时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买TPH3208PD绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解TPH3208PD产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
TPH3208PD供应商,TPH3208PD现货,TPH3208PD代理商,TPH3208PDpdf参数资料,买TPH3208PD,TPH3208PD报价,TPH3208PD库存
