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NTD3055L170-001

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单 FET、MOSFET
onsemi

MOSFET N-CH 60V 9A IPAK

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs170mOhm @ 4.5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 28.5W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package/ CaseTO-251-3 Short Leads, IPak, TO-251AA

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