参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta), 28.5W (Tj) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package/ Case | TO-251-3 Short Leads, IPak, TO-251AA |
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onsemi 单 FET、MOSFET 产品 NTD3055L170-001
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