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STN1N20

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单 FET、MOSFET

MOSFET N-CH 200V 1A SOT223

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds206 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package/ CaseTO-261-4, TO-261AA

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STMicroelectronics 单 FET、MOSFET 产品 STN1N20

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