| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 8µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.7 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 228 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 560mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT363-PO |
| Package/ Case | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies 单 FET、MOSFET 产品 BSV236SP L6327
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