| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.17A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 1.17A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 160µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package/ Case | TO-261-4, TO-261AA |
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Infineon Technologies 单 FET、MOSFET 产品 BSP315P-E6327
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