参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 15 V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies 单 FET、MOSFET 产品 IRF7324D1TR
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