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IRLR110TRL

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单 FET、MOSFET

MOSFET N-CH 100V 4.3A DPAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs540mOhm @ 2.6A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 5 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-Pak
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Vishay/ Siliconix 单 FET、MOSFET 产品 IRLR110TRL

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