| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 81.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 12 V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package/ Case | SC-100, SOT-669 |
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NXP Semiconductors 单 FET、MOSFET 产品 PH5525L,115
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