| 参数名称 | 参数值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Vgs (Max) | +22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package/ Case | TO-220-3 |
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