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FDA16N50LDTU

¥11.38
单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, N

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1945 pF @ 25 V
FET Feature-
Power Dissipation (Max)205W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN (L-Forming)
Package/ CaseTO-3P-3, SC-65-3 (Formed Leads)

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Fairchild Semiconductor 单 FET、MOSFET 产品 FDA16N50LDTU

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