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RJK0225DNS-00#J5

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单 FET、MOSFET

RJK0225 - P Channel Power MOSFET

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 4.5 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds2310 pF @ 10 V
FET Feature-
Power Dissipation (Max)30W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-HVSON (3x3.3)
Package/ Case8-PowerVDFN

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