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NP75N04YUG-E1-AY

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单 FET、MOSFET

NP75N04Y - MOSFET N Channel

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.8mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs116 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6450 pF @ 25 V
FET Feature-
Power Dissipation (Max)1W (Ta), 138W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-HSON
Package/ Case8-SMD, Flat Leads, Exposed Pad

新闻资讯

Renesas Electronics Corporation 单 FET、MOSFET 产品 NP75N04YUG-E1-AY

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