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FDME905PT

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单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, 8

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs22mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2315 pF @ 6 V
FET Feature-
Power Dissipation (Max)2.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicroFet 1.6x1.6 Thin
Package/ Case6-PowerUFDFN

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Fairchild Semiconductor 单 FET、MOSFET 产品 FDME905PT

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