| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 190mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 890mW (Ta), 2.08W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package/ Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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