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HUF76423P3

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单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR, 3

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs30mOhm @ 35A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds1060 pF @ 25 V
FET Feature-
Power Dissipation (Max)85W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package/ CaseTO-220-3

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