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IPA60R160P6

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单 FET、MOSFET

POWER FIELD-EFFECT TRANSISTOR

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2080 pF @ 100 V
FET Feature-
Power Dissipation (Max)34W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-111
Package/ CaseTO-220-3 Full Pack

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Infineon Technologies 单 FET、MOSFET 产品 IPA60R160P6

作为Infineon Technologies优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购IPA60R160P6时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买IPA60R160P6绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解IPA60R160P6产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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