参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 3mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 13 V |
FET Feature | - |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET™ SQ |
Package/ Case | DirectFET™ Isometric SQ |
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Infineon Technologies 单 FET、MOSFET 产品 IRF6713STR1PBF
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