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FQPF12P20YDTU

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单 FET、MOSFET
onsemi

MOSFET P-CH 200V 7.3A TO220F

参数名称参数值
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs470mOhm @ 3.65A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F-3
Package/ CaseTO-220-3 Full Pack

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onsemi 单 FET、MOSFET 产品 FQPF12P20YDTU

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