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APTM20SKM10TG

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单 FET、MOSFET
Microsemi

MOSFET N-CH 200V 175A SP4

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C175A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs224 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13700 pF @ 25 V
FET Feature-
Power Dissipation (Max)694W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP4
Package/ CaseSP4

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Microsemi 单 FET、MOSFET 产品 APTM20SKM10TG

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