参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
Rds On (Max) @ Id, Vgs | 9mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 2480 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package/ Case | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies 单 FET、MOSFET 产品 IRF7459PBF
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