参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2142 pF @ 12 V |
FET Feature | - |
Power Dissipation (Max) | 1.4W (Ta), 68W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package/ Case | TO-251-3 Stub Leads, IPak |
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onsemi 单 FET、MOSFET 产品 NTD4806N-35G
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