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APT31N80JC3

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单 FET、MOSFET
Microsemi

MOSFET N-CH 800V 31A ISOTOP

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs145mOhm @ 22A, 10V
Vgs(th) (Max) @ Id3.9V @ 2mA
Gate Charge (Qg) (Max) @ Vgs355 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4510 pF @ 25 V
FET Feature-
Power Dissipation (Max)833W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageISOTOP®
Package/ CaseSOT-227-4, miniBLOC

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Microsemi 单 FET、MOSFET 产品 APT31N80JC3

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