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NTD60N02R-35G

¥1.01
单 FET、MOSFET
onsemi

MOSFET N-CH 25V 8.5A/32A IPAK

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 20 V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-Pak
Package/ CaseTO-251-3 Stub Leads, IPak

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onsemi 单 FET、MOSFET 产品 NTD60N02R-35G

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