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IPI100N06S3L-03

¥9.07
单 FET、MOSFET

MOSFET N-CH 55V 100A TO262-3

参数名称参数值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs550 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds26240 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package/ CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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Infineon Technologies 单 FET、MOSFET 产品 IPI100N06S3L-03

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