参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 230µA |
Gate Charge (Qg) (Max) @ Vgs | 550 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 26240 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package/ Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies 单 FET、MOSFET 产品 IPI100N06S3L-03
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