| 参数名称 | 参数值 |
|---|---|
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSST |
| Package/ Case | 8-SMD, Flat Lead |
新闻资讯
ROHM Semiconductor 单 FET、MOSFET 产品 RT1C060UNTR
作为ROHM Semiconductor优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购RT1C060UNTR时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买RT1C060UNTR绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解RT1C060UNTR产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
RT1C060UNTR供应商,RT1C060UNTR现货,RT1C060UNTR代理商,RT1C060UNTRpdf参数资料,买RT1C060UNTR,RT1C060UNTR报价,RT1C060UNTR库存
