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DMN6040SSSQ-13

¥1.23
单 FET、MOSFET

MOSFET BVDSS: 41V~60V SO-8 T&R 2

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22.4 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1287 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package/ Case8-SOIC (0.154", 3.90mm Width)

新闻资讯

Diodes Incorporated 单 FET、MOSFET 产品 DMN6040SSSQ-13

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