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DMN10H220LFVW-13

¥1.00
单 FET、MOSFET

MOSFET BVDSS: 61V~100V POWERDI33

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs222mOhm @ 2A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.7 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds366 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 41W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device PackagePowerDI3333-8 (SWP) Type UX
Package/ Case8-PowerVDFN

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Diodes Incorporated 单 FET、MOSFET 产品 DMN10H220LFVW-13

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