参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 8 V |
Vgs (Max) | +18V, -5V |
Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 389W (Tc) |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | HiP247™ |
Package/ Case | TO-247-3 |
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STMicroelectronics 单 FET、MOSFET 产品 SCTW60N120G2
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