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SCTW60N120G2

¥232.06
单 FET、MOSFET

DISCRETE

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs94 nC @ 8 V
Vgs (Max)+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds1969 pF @ 800 V
FET Feature-
Power Dissipation (Max)389W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package/ CaseTO-247-3

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STMicroelectronics 单 FET、MOSFET 产品 SCTW60N120G2

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