| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 29.5A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 8.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1643 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 234W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-12 |
| Package/ Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies 单 FET、MOSFET 产品 IMBG65R030M1HXTMA1
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