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IPDQ60R065S7XTMA1

¥65.45
单 FET、MOSFET

HIGH POWER_NEW PG-HDSOP-22

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)12V
Rds On (Max) @ Id, Vgs65mOhm @ 8A, 12V
Vgs(th) (Max) @ Id4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs51 nC @ 12 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1932 pF @ 300 V
FET Feature-
Power Dissipation (Max)195W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HDSOP-22-1
Package/ Case22-PowerBSOP Module

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