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NVMTS1D6N10MCTXG

¥50.26
单 FET、MOSFET
onsemi

PTNG 100V SINGLE NCH PQFN8X8 STD

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 273A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7630 pF @ 50 V
FET Feature-
Power Dissipation (Max)5W (Ta), 291W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFNW (8.3x8.4)
Package/ Case8-PowerTDFN

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onsemi 单 FET、MOSFET 产品 NVMTS1D6N10MCTXG

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