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FQB34N20TM

¥19.51
单 FET、MOSFET

N-CHANNEL POWER MOSFET

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs78 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263)
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Fairchild Semiconductor 单 FET、MOSFET 产品 FQB34N20TM

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