| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Ta), 610A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 0.47mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1.449mA |
| Gate Charge (Qg) (Max) @ Vgs | 161 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 333W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TTFN-9-U02 |
| Package/ Case | 9-PowerTDFN |
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Infineon Technologies 单 FET、MOSFET 产品 IQD005N04NM6CGATMA1
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