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NVMFWS0D5N04XMT1G

¥28.51
单 FET、MOSFET
onsemi

40V T10M IN S08FL GEN 2 PACKAGE

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C423A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs0.52mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6250 pF @ 25 V
FET Feature-
Power Dissipation (Max)163W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (5x6)
Package/ Case8-PowerTDFN

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