TK16G60W5,RVQ
¥23.33
PB-F POWER MOSFET TRANSISTOR DPA
参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 230mOhm @ 7.9A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK16G60W5,RVQ
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