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NVMFS3D0P04M8LT1G

¥21.60
单 FET、MOSFET
onsemi

MV8 P INITIAL PROGRAM

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C28A (Ta), 183A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 30A,10V
Vgs(th) (Max) @ Id2.4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs124 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5827 pF @ 20 V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 171W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package/ Case8-PowerTDFN, 5 Leads

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onsemi 单 FET、MOSFET 产品 NVMFS3D0P04M8LT1G

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