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R6014YND3TL1

¥21.17
单 FET、MOSFET

NCH 600V 14A, TO-252, POWER MOSF

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Rds On (Max) @ Id, Vgs260mOhm @ 5A, 12V
Vgs(th) (Max) @ Id6V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds890 pF @ 100 V
FET Feature-
Power Dissipation (Max)132W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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ROHM Semiconductor 单 FET、MOSFET 产品 R6014YND3TL1

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