TK6R8A08QM,S4X
￥9.00
UMOS10 TO-220SIS 80V 6.8MOHM
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package/ Case | TO-220-3 Full Pack |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK6R8A08QM,S4X
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