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RF1S30P06SM

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单 FET、MOSFET

P-CHANNEL POWER MOSFET

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C30A
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

新闻资讯

Harris Corporation 单 FET、MOSFET 产品 RF1S30P06SM

作为Harris Corporation优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购RF1S30P06SM时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买RF1S30P06SM绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解RF1S30P06SM产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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