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TK8A25DA,S4X

¥6.48
单 FET、MOSFET

PB-F POWER MOSFET TRANSISTOR TO-

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250 V
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs16 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 100 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package/ CaseTO-220-3 Full Pack

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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK8A25DA,S4X

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